IRF1312PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

51 ns

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Rds On Max :

10 MΩ

Drain to Source Breakdown Voltage :

80V

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Lead Free :

Lead Free

Power Dissipation :

210W

Drain to Source Voltage (Vdss) :

80V

Current Rating :

95A

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Resistance :

10Ohm

Nominal Vgs :

5.5 V

Dual Supply Voltage :

80V

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

5450pF @ 25V

Element Configuration :

Single

Power Dissipation-Max :

3.8W Ta 210W Tc

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

10mOhm @ 57A, 10V

Rise Time :

51ns

Input Capacitance :

5.45nF

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Continuous Drain Current (ID) :

95A

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

80V

Threshold Voltage :

5.5V

Published :

2004

Max Operating Temperature :

175°C

Turn-Off Delay Time :

47 ns

Supplier Device Package :

TO-220AB

Mount :

Through Hole

Packaging :

Tube

REACH SVHC :

No SVHC

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

FET Type :

N-Channel

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Radiation Hardening :

No

Number of Pins :

3