IRF1310NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

42A Tc

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

100V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

36m Ω @ 22A, 10V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

42A

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.036Ohm

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

420 mJ

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Power Dissipation-Max :

3.8W Ta 160W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Application :

SWITCHING

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

140A

Vgs (Max) :

±20V

Surface Mount :

yes

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Published :

1998

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V