IRF1018ESPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Threshold Voltage :

4V

Fall Time (Typ) :

46 ns

Turn On Delay Time :

13 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

HEXFET®

Transistor Application :

SWITCHING

Height :

4.826mm

Power Dissipation :

110W

Packaging :

Tube

Vgs (Max) :

±20V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

ECCN Code :

EAR99

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Terminal Form :

Gull wing

Published :

2008

Continuous Drain Current (ID) :

79A

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Transistor Element Material :

SILICON

Recovery Time :

39 ns

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

79A Tc

Mounting Type :

Surface Mount

Length :

10.668mm

Vgs(th) (Max) @ Id :

4V @ 100µA

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 50V

Avalanche Energy Rating (Eas) :

88 mJ

Resistance :

8.4mOhm

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Number of Pins :

3

Power Dissipation-Max :

110W Tc

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 47A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Width :

9.65mm

JESD-609 Code :

e3

Rise Time :

35ns

Mount :

Surface Mount

REACH SVHC :

No SVHC

Factory Lead Time :

52 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

55 ns

Radiation Hardening :

No