IRF1018EPBF

Manufacturer :

International Rectifier

Product Category :

Specialized ICs

Vgs(th) (Max) @ Id :

4V @ 100µA

Rise Time :

35ns

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Power Dissipation :

110W

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Number of Elements :

1

Turn-Off Delay Time :

55 ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Length :

10.668mm

Fall Time (Typ) :

46 ns

Recovery Time :

39 ns

Resistance :

8.4mOhm

Vgs (Max) :

±20V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Published :

2002

Number of Terminations :

3

Width :

4.826mm

Height :

9.017mm

Transistor Application :

SWITCHING

Contact Plating :

Tin

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Turn On Delay Time :

13 ns

Continuous Drain Current (ID) :

79A

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Avalanche Energy Rating (Eas) :

88 mJ

Current - Continuous Drain (Id) @ 25°C :

79A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 50V

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Element Configuration :

Single

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 47A, 10V

Power Dissipation-Max :

110W Tc

Transistor Element Material :

SILICON

Lead Free :

Lead Free