IRF1010ZSTRLPBF
- Mfr.Part #
- IRF1010ZSTRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A D2PAK
- Stock
- 13,360
- In Stock :
- 13,360
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 36 ns
- Width :
- 9.65mm
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- N-Channel
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.668mm
- Drain to Source Breakdown Voltage :
- 55V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 75A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 140W
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- HEXFET®
- Height :
- 4.826mm
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 75A
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Power Dissipation-Max :
- 140W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2840pF @ 25V
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 18 ns
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Mounting Type :
- Surface Mount
- Rise Time :
- 150ns
- Fall Time (Typ) :
- 92 ns
- Published :
- 2001
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Terminal Form :
- Gull wing
- Datasheets
- IRF1010ZSTRLPBF

N-Channel Tape & Reel (TR) 7.5m Ω @ 75A, 10V ±20V 2840pF @ 25V 95nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1010ZSTRLPBF Overview
A device's maximum input capacitance is 2840pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 36 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF1010ZSTRLPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 36 ns
IRF1010ZSTRLPBF Applications
There are a lot of Infineon Technologies
IRF1010ZSTRLPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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