IRF1010NSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

55V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.011Ohm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Number of Terminations :

2

FET Type :

N-Channel

Terminal Form :

Gull wing

Published :

2001

Rds On (Max) @ Id, Vgs :

11m Ω @ 43A, 10V

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

290A

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

250 mJ

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3210pF @ 25V

Power Dissipation-Max :

180W Tc

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

DS Breakdown Voltage-Min :

55V

Drain Current-Max (Abs) (ID) :

75A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE