IRF1010NSTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

75A

Terminal Form :

Gull wing

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

55V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

290A

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain-source On Resistance-Max :

0.011Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Surface Mount :

yes

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

11m Ω @ 43A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3210pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Published :

2002

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Avalanche Energy Rating (Eas) :

250 mJ

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Power Dissipation-Max :

180W Tc

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

85A Tc