IPI65R660CFD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Series :

CoolMOS™

FET Type :

N-Channel

Rise Time :

8ns

Packaging :

Tube

Pbfree Code :

yes

Number of Terminations :

3

Published :

2008

Drain Current-Max (Abs) (ID) :

6A

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

6A

Turn-Off Delay Time :

40 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Surface Mount :

No

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

660m Ω @ 2.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

615pF @ 100V

Fall Time (Typ) :

10 ns

Pulsed Drain Current-Max (IDM) :

17A

Number of Pins :

3

Number of Elements :

1

Turn On Delay Time :

9 ns

Drain-source On Resistance-Max :

0.66Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

62.5W Tc

Drain to Source Breakdown Voltage :

650V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

115 mJ

Power Dissipation :

63W

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

6A Tc