IPI600N25N3G
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- Mfr.Part #
- IPI600N25N3G
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- IPI600N25 - 12V-300V N-CHANNEL P
- Stock
- 7,389
- In Stock ：
- 7,389
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 136W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Drain-source On Resistance-Max :
- 0.06Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 22 ns
- FET Type :
- N-Channel
- Published :
- 2008
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- Series :
- OptiMOS™
- Continuous Drain Current (ID) :
- 25A
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 2350pF @ 100V
- Packaging :
- Tube
- Lead Free :
- Contains Lead
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Power Dissipation :
- 136W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 10 ns
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Halogen Free :
- Halogen Free
- JESD-30 Code :
- R-PSIP-T3
- Fall Time (Typ) :
- 8 ns
- Operating Temperature :
- -55°C~175°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 4V @ 90µA
- Factory Lead Time :
- 18 Weeks
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 25A, 10V
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Max Dual Supply Voltage :
- 250V
- Datasheets
- IPI600N25N3G
N-Channel Tube 60m Ω @ 25A, 10V ±20V 2350pF @ 100V 29nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI600N25N3GAKSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2350pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 22 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 250V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPI600N25N3GAKSA1 Features
a continuous drain current (ID) of 25A
the turn-off delay time is 22 ns
IPI600N25N3GAKSA1 Applications
There are a lot of Infineon Technologies
IPI600N25N3GAKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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