IPI600N25N3GAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Power Dissipation :

136W

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.06Ohm

Turn-Off Delay Time :

22 ns

Packaging :

Tube

Max Dual Supply Voltage :

250V

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Published :

2008

Number of Terminations :

3

Pin Count :

3

JESD-30 Code :

R-PSIP-T3

Rds On (Max) @ Id, Vgs :

60m Ω @ 25A, 10V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Terminal Position :

Single

Mounting Type :

Through Hole

ECCN Code :

EAR99

Power Dissipation-Max :

136W Tc

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

8 ns

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Contains Lead

Number of Elements :

1

Continuous Drain Current (ID) :

25A

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 100V

Factory Lead Time :

18 Weeks

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No

Turn On Delay Time :

10 ns

Qualification Status :

Not Qualified

Halogen Free :

Halogen Free