IPI600N25N3GAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

136W Tc

Continuous Drain Current (ID) :

25A

Transistor Application :

SWITCHING

Power Dissipation :

136W

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

60m Ω @ 25A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Fall Time (Typ) :

8 ns

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

JESD-609 Code :

e3

Max Dual Supply Voltage :

250V

Lead Free :

Contains Lead

Turn-Off Delay Time :

22 ns

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSIP-T3

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Drain-source On Resistance-Max :

0.06Ohm

Vgs(th) (Max) @ Id :

4V @ 90µA

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 100V

Series :

OptiMOS™

Turn On Delay Time :

10 ns

Mount :

Through Hole

Qualification Status :

Not Qualified

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Pbfree Code :

No

Factory Lead Time :

18 Weeks

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Terminal Position :

Single

Number of Terminations :

3