IPI60R099CPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Pulsed Drain Current-Max (IDM) :

93A

Power Dissipation-Max :

255W Tc

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 1.2mA

Rds On (Max) @ Id, Vgs :

99m Ω @ 18A, 10V

Drain Current-Max (Abs) (ID) :

31A

Factory Lead Time :

8 Weeks

FET Type :

N-Channel

Published :

2008

Drain to Source Voltage (Vdss) :

600V

Number of Terminations :

3

Series :

CoolMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Avalanche Energy Rating (Eas) :

800 mJ

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 100V

Terminal Position :

Single

Number of Elements :

1

Pin Count :

3

Transistor Application :

SWITCHING

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.099Ohm

JESD-30 Code :

R-PSIP-T3

Mounting Type :

Through Hole

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)