IPI60R190C6XKSA1
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- Mfr.Part #
- IPI60R190C6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20.2A TO262-3
- Stock
- 495
- In Stock ：
- 495
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.19Ohm
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 100V
- Drain to Source Voltage (Vdss) :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 20.2A Tc
- JESD-30 Code :
- R-PSIP-T3
- Published :
- 2008
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 151W Tc
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- No
- Drain Current-Max (Abs) (ID) :
- 20.2A
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 9.5A, 10V
- Pulsed Drain Current-Max (IDM) :
- 59A
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Vgs(th) (Max) @ Id :
- 3.5V @ 630μA
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 418 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- CoolMOS™
- Number of Elements :
- 1
- Datasheets
- IPI60R190C6XKSA1
N-Channel Tube 190m Ω @ 9.5A, 10V ±20V 1400pF @ 100V 63nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI60R190C6XKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 418 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1400pF @ 100V.The drain current is the maximum continuous current this device can conduct, which is 20.2A.Pulsed drain current is maximum rated peak drain current 59A.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPI60R190C6XKSA1 Features
the avalanche energy rating (Eas) is 418 mJ
based on its rated peak drain current 59A.
a 600V drain to source voltage (Vdss)
IPI60R190C6XKSA1 Applications
There are a lot of Infineon Technologies
IPI60R190C6XKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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