IPI60R190C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 100V

Rds On (Max) @ Id, Vgs :

190m Ω @ 9.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

FET Type :

N-Channel

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

59A

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Series :

CoolMOS™

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

418 mJ

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

151W Tc

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Drain Current-Max (Abs) (ID) :

20.2A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 630μA

DS Breakdown Voltage-Min :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2008

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.19Ohm

Qualification Status :

Not Qualified

Number of Elements :

1

Pbfree Code :

yes

Transistor Element Material :

SILICON

Number of Terminations :

3