IPI60R165CPAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 790μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

12 ns

Lead Free :

Contains Lead

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

522 mJ

Drain-source On Resistance-Max :

0.165Ohm

Rds On (Max) @ Id, Vgs :

165m Ω @ 12A, 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

21A

Rise Time :

5ns

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Max Dual Supply Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Published :

2011

Pulsed Drain Current-Max (IDM) :

61A

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 100V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Pbfree Code :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Halogen Free :

Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Number of Terminations :

3

Power Dissipation-Max :

192W Tc

Drain to Source Voltage (Vdss) :

650V

Gate to Source Voltage (Vgs) :

20V

Series :

CoolMOS™

Transistor Application :

SWITCHING

Number of Pins :

3

Packaging :

Tube

Turn-Off Delay Time :

50 ns