IPI65R600C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Type :

N

On-State Resistance :

600 mΩ

Packaging :

Tube

Manufacturer :

Infineon

Number of Channels :

1 Channel

Mount :

Through Hole

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

440 pF @ 100 V

Current - Continuous Drain (Id) @ 25°C :

7.3A (Tc)

Length :

10.2 mm

Package / Case :

TO-262-3

Brand :

Infineon Technologies

Configuration :

Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Continuous Drain Current (ID) :

7.3 A

Input Capacitance :

440 pF

Power Dissipation (Max) :

63W (Tc)

Channel Mode :

Enhancement

Number of Elements :

1

FET Feature :

-

Tradename :

CoolMOS

Subcategory :

MOSFETs

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

600mOhm @ 2.1A, 10V

Turn-Off Delay Time :

80 ns

FET Type :

N-Channel

Lifecycle Status :

Obsolete (Last Updated: 2 years ago)

Mounting Type :

Through Hole

Product Category :

MOSFET

Width :

4.5 mm

Minimum Operating Temperature :

- 55 C

Series :

CoolMOS C6

Max Power Dissipation :

63 W

Transistor Type :

1 N-Channel

Product Type :

MOSFET

Max Operating Temperature :

150 °C

Technology :

Si

Height :

9.45 mm

Continuous Drain Current Id :

7.3

Min Operating Temperature :

-55 °C

Max Dual Supply Voltage :

650 V

Supplier Device Package :

PG-TO262-3-1

Package :

Bulk

Halogen Free :

Halogen Free

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

650 V

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package Quantity :

500

RoHS :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

23 nC @ 10 V

Product Status :

Active

Gate to Source Voltage (Vgs) :

20 V

Rds On Max :

600 mΩ

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Mounting Style :

Through Hole

Power Dissipation :

63 W

Rise Time :

9 ns

Turn-On Delay Time :

12 ns