IPI65R420CFD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 300µA

Package Quantity :

500

Width :

4.57 mm

Manufacturer :

Infineon

Package / Case :

TO-262-3

Drain to Source Voltage (Vdss) :

650 V

Continuous Drain Current (ID) :

8.7 A

Min Operating Temperature :

-55 °C

Drain to Source Breakdown Voltage :

650 V

Gate to Source Voltage (Vgs) :

30 V

Turn-On Delay Time :

10 ns

FET Type :

N-Channel

Lifecycle Status :

Obsolete (Last Updated: 2 years ago)

Power Dissipation :

83.3 W

Technology :

Si

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Rds On (Max) @ Id, Vgs :

420mOhm @ 3.4A, 10V

Gate Charge (Qg) (Max) @ Vgs :

31.5 nC @ 10 V

Product Status :

Active

Package :

Bulk

RoHS :

Compliant

Operating Temperature :

-55°C ~ 150°C (TJ)

Length :

10.36 mm

Element Configuration :

Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain to Source Resistance :

420 mΩ

Power Dissipation (Max) :

83.3W (Tc)

Halogen Free :

Halogen Free

Max Operating Temperature :

150 °C

Number of Pins :

3

Channel Mode :

Enhancement

Max Power Dissipation :

83.3 W

On-State Resistance :

420 mΩ

Mounting Style :

Through Hole

Tradename :

CoolMOS

Rise Time :

7 ns

Turn-Off Delay Time :

38 ns

Configuration :

Single

Mounting Type :

Through Hole

Packaging :

Tube

FET Feature :

-

Supplier Device Package :

PG-TO262-3-1

Input Capacitance (Ciss) (Max) @ Vds :

870 pF @ 100 V

Vgs (Max) :

±20V

Series :

CoolMOS CFD2

Current - Continuous Drain (Id) @ 25°C :

8.7A (Tc)

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

Brand :

Infineon Technologies

Product Category :

MOSFET

Height :

9.45 mm

Input Capacitance :

870 pF

Product Type :

MOSFET

Number of Channels :

1 Channel

Rds On Max :

420 mΩ

Subcategory :

MOSFETs