IPI65R310CFD
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- Mfr.Part #
- IPI65R310CFD
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 10,696
- In Stock ：
- 10,696
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 100V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 16 Weeks
- Rise Time :
- 7.5ns
- Max Dual Supply Voltage :
- 650V
- Published :
- 2008
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 104.2W Tc
- Vgs (Max) :
- ±20V
- RoHS Status :
- RoHS Compliant
- Halogen Free :
- Halogen Free
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 11.4A
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Fall Time (Typ) :
- 7 ns
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSIP-T3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 310m Ω @ 4.4A, 10V
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 34.4A
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Series :
- CoolMOS™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 45 ns
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 11.4A Tc
- Turn On Delay Time :
- 11 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 440μA
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Datasheets
- IPI65R310CFD
N-Channel Tube 310m Ω @ 4.4A, 10V ±20V 1100pF @ 100V 41nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI65R310CFDXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1100pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 34.4A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 650V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPI65R310CFDXKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 11.4A
the turn-off delay time is 45 ns
based on its rated peak drain current 34.4A.
IPI65R310CFDXKSA1 Applications
There are a lot of Infineon Technologies
IPI65R310CFDXKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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