IPI65R280C6

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Mfr.Part #
IPI65R280C6
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
500
In Stock :
500

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Series :
CoolMOS™
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Pulsed Drain Current-Max (IDM) :
39A
Current - Continuous Drain (Id) @ 25°C :
13.8A Tc
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
104W Tc
Drain to Source Voltage (Vdss) :
650V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
Number of Terminations :
3
Factory Lead Time :
12 Weeks
Avalanche Energy Rating (Eas) :
290 mJ
Packaging :
Tube
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
280m Ω @ 4.4A, 10V
JESD-30 Code :
R-PSIP-T3
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
3.5V @ 440µA
Published :
2008
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
650V
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
950pF @ 100V
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.28Ohm
Vgs (Max) :
±20V
Terminal Position :
Single
Operating Mode :
ENHANCEMENT MODE
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
Datasheets
IPI65R280C6
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPI65R280C6 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, IPI65R280C6 pinout, IPI65R280C6 datasheet PDF, IPI65R280C6 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPI65R280C6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPI65R280C6


N-Channel Tube 280m Ω @ 4.4A, 10V ±20V 950pF @ 100V 45nC @ 10V 650V TO-262-3 Long Leads, I2Pak, TO-262AA

IPI65R280C6XKSA1 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 290 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 950pF @ 100V is its maximum input capacitance.Peak drain current is 39A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 650V.For this transistor to work, a voltage 650V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPI65R280C6XKSA1 Features


the avalanche energy rating (Eas) is 290 mJ
based on its rated peak drain current 39A.
a 650V drain to source voltage (Vdss)


IPI65R280C6XKSA1 Applications


There are a lot of Infineon Technologies
IPI65R280C6XKSA1 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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