IPI60R385CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600 V

Vgs(th) (Max) @ Id :

3.5V @ 340µA

Configuration :

Single

Width :

4.5 mm

Tradename :

CoolMOS

Surface Mount :

No

Mounting Style :

Through Hole

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

600 V

Terminal Form :

THROUGH-HOLE

Package Shape :

RECTANGULAR

RoHS :

Details

Qualification Status :

COMMERCIAL

Height :

9.45 mm

Power Dissipation (Max) :

83W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

27 A

Package :

Bulk

Channel Type :

N

Avalanche Energy Rating (Eas) :

227 mJ

Packaging :

Tube

Power Dissipation :

83

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.385 Ω

Input Capacitance (Ciss) (Max) @ Vds :

790 pF @ 100 V

Continuous Drain Current Id :

9

Number of Terminals :

3

Maximum Operating Temperature :

+ 150 C

Reach Compliance Code :

Unknown

Length :

10.2 mm

Terminal Position :

Single

Brand :

Infineon Technologies

Rds On (Max) @ Id, Vgs :

385mOhm @ 5.2A, 10V

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 10 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Pbfree Code :

yes

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

FET Type :

N-Channel

Supplier Device Package :

PG-TO262-3-1

Vgs (Max) :

±20V

Rise Time :

5 ns

JEDEC-95 Code :

TO-262AA

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

1 N-Channel

FET Feature :

-

Technology :

Si

Number of Channels :

1 Channel

Manufacturer :

Infineon

Subcategory :

MOSFETs

Pin Count :

3

JESD-609 Code :

e3

Series :

CoolMOS CP

Package / Case :

TO-262-3

JESD-30 Code :

R-PSIP-T3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

- 55 C

Product Status :

Active