IPI60R385CP
- Mfr.Part #
- IPI60R385CP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 696
- In Stock :
- 696
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.385 Ω
- Supplier Device Package :
- PG-TO262-3-1
- Brand :
- Infineon Technologies
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Continuous Drain Current Id :
- 9
- Length :
- 10.2 mm
- Pbfree Code :
- yes
- Height :
- 9.45 mm
- DS Breakdown Voltage-Min :
- 600 V
- Vgs(th) (Max) @ Id :
- 3.5V @ 340µA
- JESD-30 Code :
- R-PSIP-T3
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 790 pF @ 100 V
- Channel Mode :
- Enhancement
- Technology :
- Si
- Avalanche Energy Rating (Eas) :
- 227 mJ
- Width :
- 4.5 mm
- Transistor Type :
- 1 N-Channel
- Package Shape :
- RECTANGULAR
- Series :
- CoolMOS CP
- Product Type :
- MOSFET
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 83W (Tc)
- Number of Channels :
- 1 Channel
- Terminal Position :
- Single
- Product Status :
- Active
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Category :
- MOSFET
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Unknown
- Power Dissipation :
- 83
- Gate Charge (Qg) (Max) @ Vgs :
- 22 nC @ 10 V
- Peak Reflow Temperature (Cel) :
- 260
- Configuration :
- Single
- Subcategory :
- MOSFETs
- Mounting Style :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 385mOhm @ 5.2A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 9A (Tc)
- Channel Type :
- N
- Transistor Polarity :
- N-Channel
- Package / Case :
- TO-262-3
- Tradename :
- CoolMOS
- JEDEC-95 Code :
- TO-262AA
- Rise Time :
- 5 ns
- Pulsed Drain Current-Max (IDM) :
- 27 A
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Terminal Form :
- THROUGH-HOLE
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 600 V
- FET Type :
- N-Channel
- RoHS :
- Details
- FET Feature :
- -
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Terminal Finish :
- MATTE TIN
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 3
- Package :
- Bulk
- Manufacturer :
- Infineon
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Datasheets
- IPI60R385CP

Si N-Channel Tube 385mOhm @ 5.2A, 10V ±20V 790 pF @ 100 V 22 nC @ 10 V 600 V TO-262-3
IPI60R385CP Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 227 mJ.A device's maximal input capacitance is 790 pF @ 100 V, which is defined as the capacitance between its input terminals with either input grounded.In terms of pulsed drain current, it has a maximum of 27 A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600 V drain to source voltage (Vdss).
IPI60R385CP Features
the avalanche energy rating (Eas) is 227 mJ
based on its rated peak drain current 27 A.
a 600 V drain to source voltage (Vdss)
IPI60R385CP Applications
There are a lot of Infineon
IPI60R385CP applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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