IPI60R199CPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

1520pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

16A Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSIP-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

600V

Mounting Type :

Through Hole

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

199m Ω @ 9.9A, 10V

Number of Elements :

1

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3.5V @ 660µA

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Avalanche Energy Rating (Eas) :

436 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

16A

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.199Ohm

Drain to Source Voltage (Vdss) :

600V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

51A

Packaging :

Tube

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Power Dissipation-Max :

139W Tc