IPI60R190C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

3.5V @ 630μA

Terminal Position :

Single

Drain-source On Resistance-Max :

0.19Ohm

Avalanche Energy Rating (Eas) :

418 mJ

Power Dissipation-Max :

151W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

59A

Series :

CoolMOS™

Drain to Source Voltage (Vdss) :

600V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Published :

2008

Pbfree Code :

yes

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

190m Ω @ 9.5A, 10V

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

20.2A

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Surface Mount :

No

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 100V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc