IPI60R250CP
- Mfr.Part #
- IPI60R250CP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Datasheet
- Download
- Description
- COOLMOS N-CHANNEL POWER MOSFET
- Stock
- 1,756
- In Stock :
- 1,756
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.25 Ω
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Package :
- Bulk
- Min Operating Temperature :
- -55 °C
- Gate Charge (Qg) (Max) @ Vgs :
- 35 nC @ 10 V
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 104W (Tc)
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 600 V
- Terminal Finish :
- MATTE TIN
- Avalanche Energy Rating (Eas) :
- 345 mJ
- Manufacturer :
- Infineon Technologies AG
- Turn-Off Delay Time :
- 110 ns
- Threshold Voltage :
- 3 V
- Package Shape :
- RECTANGULAR
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Max Power Dissipation :
- 104 W
- Terminal Form :
- THROUGH-HOLE
- Technology :
- MOSFET (Metal Oxide)
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs :
- 250mOhm @ 7.8A, 10V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 12A (Tc)
- Continuous Drain Current (ID) :
- 12 A
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 650 V
- FET Feature :
- -
- Factory Lead Time :
- 1 Week
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Input Capacitance :
- 1.2 nF
- Turn-On Delay Time :
- 40 ns
- Gate to Source Voltage (Vgs) :
- 20 V
- JEDEC-95 Code :
- TO-262AA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Max Operating Temperature :
- 150 °C
- Halogen Free :
- Halogen Free
- Product Status :
- Active
- Subcategory :
- FET General Purpose Power
- Vgs(th) (Max) @ Id :
- 3.5V @ 520µA
- Pulsed Drain Current-Max (IDM) :
- 40 A
- JESD-30 Code :
- R-PSIP-T3
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max (Abs) :
- 104 W
- Number of Pins :
- 3
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200 pF @ 100 V
- Drain to Source Resistance :
- 250 mΩ
- Rise Time :
- 17 ns
- Power Dissipation :
- 151
- Package / Case :
- TO-262-3 Long Leads, I²Pak, TO-262AA
- DS Breakdown Voltage-Min :
- 600 V
- Drain Current-Max (Abs) (ID) :
- 12 A
- RoHS :
- Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current Id :
- 20.2
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- CoolMOS™
- Supplier Device Package :
- PG-TO262
- Mounting Type :
- Through Hole
- Channel Type :
- N
- Rds On Max :
- 250 mΩ
- Datasheets
- IPI60R250CP

MOSFET (Metal Oxide) N-Channel 250mOhm @ 7.8A, 10V ±20V 1200 pF @ 100 V 35 nC @ 10 V 650 V TO-262-3 Long Leads, I²Pak, TO-262AA
IPI60R250CP Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 345 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1200 pF @ 100 V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12 A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600 V. And this device has 600 V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 40 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 250 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20 V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3 V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 650 V drain to source voltage (Vdss).
IPI60R250CP Features
the avalanche energy rating (Eas) is 345 mJ
a continuous drain current (ID) of 12 A
a drain-to-source breakdown voltage of 600 V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 40 A.
single MOSFETs transistor is 250 mΩ
a threshold voltage of 3 V
a 650 V drain to source voltage (Vdss)
IPI60R250CP Applications
There are a lot of Infineon
IPI60R250CP applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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