IPI60R250CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55 °C

Number of Pins :

3

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

345 mJ

Subcategory :

FET General Purpose Power

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

104W (Tc)

Drain to Source Breakdown Voltage :

600 V

Input Capacitance (Ciss) (Max) @ Vds :

1200 pF @ 100 V

Reach Compliance Code :

Compliant

Terminal Position :

Single

FET Feature :

-

Package :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

35 nC @ 10 V

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

3.5V @ 520µA

Pbfree Code :

yes

Pin Count :

3

Turn-Off Delay Time :

110 ns

Continuous Drain Current Id :

20.2

Power Dissipation :

151

Operating Temperature :

-55°C ~ 150°C (TJ)

Max Power Dissipation :

104 W

Rds On (Max) @ Id, Vgs :

250mOhm @ 7.8A, 10V

Drain to Source Voltage (Vdss) :

650 V

Number of Terminals :

3

JESD-609 Code :

e3

Surface Mount :

No

Gate to Source Voltage (Vgs) :

20 V

JEDEC-95 Code :

TO-262AA

Manufacturer :

Infineon Technologies AG

Turn-On Delay Time :

40 ns

Rds On Max :

250 mΩ

Polarity/Channel Type :

N-Channel

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

DS Breakdown Voltage-Min :

600 V

Terminal Form :

THROUGH-HOLE

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

1 Week

Technology :

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Product Status :

Active

Continuous Drain Current (ID) :

12 A

Power Dissipation-Max (Abs) :

104 W

Supplier Device Package :

PG-TO262

Pulsed Drain Current-Max (IDM) :

40 A

RoHS :

Compliant

Element Configuration :

Single

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Transistor Application :

SWITCHING

Threshold Voltage :

3 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

REACH SVHC :

No SVHC

Series :

CoolMOS™

Drain Current-Max (Abs) (ID) :

12 A

FET Type :

N-Channel

Drain to Source Resistance :

250 mΩ

Max Operating Temperature :

150 °C

Channel Type :

N

Input Capacitance :

1.2 nF

Halogen Free :

Halogen Free

Package Shape :

RECTANGULAR

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

17 ns

Drain-source On Resistance-Max :

0.25 Ω

Vgs (Max) :

±20V