IPI60R250CP

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Mfr.Part #
IPI60R250CP
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Datasheet
Download
Description
COOLMOS N-CHANNEL POWER MOSFET
Stock
1,756
In Stock :
1,756

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Drain-source On Resistance-Max :
0.25 Ω
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Position :
Single
Qualification Status :
Not Qualified
Package :
Bulk
Min Operating Temperature :
-55 °C
Gate Charge (Qg) (Max) @ Vgs :
35 nC @ 10 V
JESD-609 Code :
e3
Vgs (Max) :
±20V
Power Dissipation (Max) :
104W (Tc)
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
600 V
Terminal Finish :
MATTE TIN
Avalanche Energy Rating (Eas) :
345 mJ
Manufacturer :
Infineon Technologies AG
Turn-Off Delay Time :
110 ns
Threshold Voltage :
3 V
Package Shape :
RECTANGULAR
Element Configuration :
Single
REACH SVHC :
No SVHC
Drive Voltage (Max Rds On, Min Rds On) :
10V
Max Power Dissipation :
104 W
Terminal Form :
THROUGH-HOLE
Technology :
MOSFET (Metal Oxide)
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs :
250mOhm @ 7.8A, 10V
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
12A (Tc)
Continuous Drain Current (ID) :
12 A
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
650 V
FET Feature :
-
Factory Lead Time :
1 Week
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Input Capacitance :
1.2 nF
Turn-On Delay Time :
40 ns
Gate to Source Voltage (Vgs) :
20 V
JEDEC-95 Code :
TO-262AA
Configuration :
SINGLE WITH BUILT-IN DIODE
Max Operating Temperature :
150 °C
Halogen Free :
Halogen Free
Product Status :
Active
Subcategory :
FET General Purpose Power
Vgs(th) (Max) @ Id :
3.5V @ 520µA
Pulsed Drain Current-Max (IDM) :
40 A
JESD-30 Code :
R-PSIP-T3
Reach Compliance Code :
Compliant
Power Dissipation-Max (Abs) :
104 W
Number of Pins :
3
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
1200 pF @ 100 V
Drain to Source Resistance :
250 mΩ
Rise Time :
17 ns
Power Dissipation :
151
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
DS Breakdown Voltage-Min :
600 V
Drain Current-Max (Abs) (ID) :
12 A
RoHS :
Compliant
Peak Reflow Temperature (Cel) :
260
Continuous Drain Current Id :
20.2
Pin Count :
3
Operating Mode :
ENHANCEMENT MODE
Series :
CoolMOS™
Supplier Device Package :
PG-TO262
Mounting Type :
Through Hole
Channel Type :
N
Rds On Max :
250 mΩ
Datasheets
IPI60R250CP
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPI60R250CP from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C ~ 150°C (TJ), Number of Pins:3, Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type:Through Hole, IPI60R250CP pinout, IPI60R250CP datasheet PDF, IPI60R250CP amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPI60R250CP ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPI60R250CP


MOSFET (Metal Oxide) N-Channel 250mOhm @ 7.8A, 10V ±20V 1200 pF @ 100 V 35 nC @ 10 V 650 V TO-262-3 Long Leads, I²Pak, TO-262AA

IPI60R250CP Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 345 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1200 pF @ 100 V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12 A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600 V. And this device has 600 V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 40 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 250 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20 V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3 V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 650 V drain to source voltage (Vdss).

IPI60R250CP Features


the avalanche energy rating (Eas) is 345 mJ
a continuous drain current (ID) of 12 A
a drain-to-source breakdown voltage of 600 V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 40 A.
single MOSFETs transistor is 250 mΩ
a threshold voltage of 3 V
a 650 V drain to source voltage (Vdss)


IPI60R250CP Applications


There are a lot of Infineon
IPI60R250CP applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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