IPI60R250CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Vgs (Max) :

±20V

Technology :

MOSFET (Metal Oxide)

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Pbfree Code :

yes

JESD-30 Code :

R-PSIP-T3

Gate Charge (Qg) (Max) @ Vgs :

35 nC @ 10 V

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

40 A

JEDEC-95 Code :

TO-262AA

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

250mOhm @ 7.8A, 10V

Gate to Source Voltage (Vgs) :

20 V

Mounting Type :

Through Hole

Max Power Dissipation :

104 W

Halogen Free :

Halogen Free

Number of Elements :

1

Power Dissipation (Max) :

104W (Tc)

Series :

CoolMOS™

Manufacturer :

Infineon Technologies AG

RoHS :

Compliant

FET Feature :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Turn-Off Delay Time :

110 ns

Min Operating Temperature :

-55 °C

Package Shape :

RECTANGULAR

Drain to Source Breakdown Voltage :

600 V

Drain-source On Resistance-Max :

0.25 Ω

Channel Type :

N

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Pin Count :

3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.5V @ 520µA

Max Operating Temperature :

150 °C

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Factory Lead Time :

1 Week

Number of Terminals :

3

Number of Pins :

3

DS Breakdown Voltage-Min :

600 V

Continuous Drain Current (ID) :

12 A

Threshold Voltage :

3 V

Polarity/Channel Type :

N-Channel

Product Status :

Active

Element Configuration :

Single

Package :

Bulk

Avalanche Energy Rating (Eas) :

345 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

151

Drain to Source Voltage (Vdss) :

650 V

Terminal Form :

THROUGH-HOLE

Continuous Drain Current Id :

20.2

Drain Current-Max (Abs) (ID) :

12 A

Input Capacitance :

1.2 nF

Power Dissipation-Max (Abs) :

104 W

Input Capacitance (Ciss) (Max) @ Vds :

1200 pF @ 100 V

Supplier Device Package :

PG-TO262

Rise Time :

17 ns

Terminal Position :

Single

Subcategory :

FET General Purpose Power

Turn-On Delay Time :

40 ns

Drain to Source Resistance :

250 mΩ

Rds On Max :

250 mΩ