IPI60R250CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

345 mJ

Pin Count :

3

Gate to Source Voltage (Vgs) :

20 V

Product Status :

Active

Mounting Type :

Through Hole

Rds On Max :

250 mΩ

Peak Reflow Temperature (Cel) :

260

RoHS :

Compliant

Number of Pins :

3

JEDEC-95 Code :

TO-262AA

Vgs (Max) :

±20V

Threshold Voltage :

3 V

Number of Elements :

1

Channel Type :

N

Drain to Source Breakdown Voltage :

600 V

Max Power Dissipation :

104 W

Drain-source On Resistance-Max :

0.25 Ω

Drain to Source Voltage (Vdss) :

650 V

REACH SVHC :

No SVHC

Power Dissipation-Max (Abs) :

104 W

Supplier Device Package :

PG-TO262

Turn-On Delay Time :

40 ns

Pbfree Code :

yes

Terminal Form :

THROUGH-HOLE

Package Shape :

RECTANGULAR

Halogen Free :

Halogen Free

Factory Lead Time :

1 Week

FET Type :

N-Channel

Continuous Drain Current (ID) :

12 A

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Drain Current-Max (Abs) (ID) :

12 A

Power Dissipation (Max) :

104W (Tc)

Rds On (Max) @ Id, Vgs :

250mOhm @ 7.8A, 10V

Rise Time :

17 ns

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

40 A

FET Feature :

-

Reach Compliance Code :

Compliant

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Number of Terminals :

3

Max Operating Temperature :

150 °C

Surface Mount :

No

Power Dissipation :

151

JESD-30 Code :

R-PSIP-T3

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-55 °C

Drive Voltage (Max Rds On, Min Rds On) :

10V

JESD-609 Code :

e3

Element Configuration :

Single

Qualification Status :

Not Qualified

Turn-Off Delay Time :

110 ns

DS Breakdown Voltage-Min :

600 V

Technology :

MOSFET (Metal Oxide)

Manufacturer :

Infineon Technologies AG

Input Capacitance :

1.2 nF

Package :

Bulk

Series :

CoolMOS™

Continuous Drain Current Id :

20.2

Subcategory :

FET General Purpose Power

Input Capacitance (Ciss) (Max) @ Vds :

1200 pF @ 100 V

Gate Charge (Qg) (Max) @ Vgs :

35 nC @ 10 V

Drain to Source Resistance :

250 mΩ

Terminal Position :

Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

3.5V @ 520µA