IPI60R165CPAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

50 ns

Drain to Source Voltage (Vdss) :

650V

Mount :

Through Hole

Drain-source On Resistance-Max :

0.165Ohm

Pulsed Drain Current-Max (IDM) :

61A

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Vgs(th) (Max) @ Id :

3.5V @ 790μA

Avalanche Energy Rating (Eas) :

522 mJ

Number of Elements :

1

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Published :

2011

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Continuous Drain Current (ID) :

21A

Halogen Free :

Halogen Free

Transistor Application :

SWITCHING

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Packaging :

Tube

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Turn On Delay Time :

12 ns

Series :

CoolMOS™

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

165m Ω @ 12A, 10V

Power Dissipation-Max :

192W Tc

Transistor Element Material :

SILICON

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 100V

Rise Time :

5ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED