IPI600N25N3G
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- Mfr.Part #
- IPI600N25N3G
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- IPI600N25 - 12V-300V N-CHANNEL P
- Stock
- 7,389
- In Stock ：
- 7,389
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 136W Tc
- FET Type :
- N-Channel
- Series :
- OptiMOS™
- Power Dissipation :
- 136W
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Dual Supply Voltage :
- 250V
- Terminal Position :
- Single
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 90µA
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 22 ns
- Published :
- 2008
- Halogen Free :
- Halogen Free
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 25A
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 18 Weeks
- Fall Time (Typ) :
- 8 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- JESD-30 Code :
- R-PSIP-T3
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2350pF @ 100V
- Mounting Type :
- Through Hole
- Lead Free :
- Contains Lead
- Turn On Delay Time :
- 10 ns
- Drain-source On Resistance-Max :
- 0.06Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 25A, 10V
- Datasheets
- IPI600N25N3G
N-Channel Tube 60m Ω @ 25A, 10V ±20V 2350pF @ 100V 29nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI600N25N3GAKSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2350pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 22 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 250V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPI600N25N3GAKSA1 Features
a continuous drain current (ID) of 25A
the turn-off delay time is 22 ns
IPI600N25N3GAKSA1 Applications
There are a lot of Infineon Technologies
IPI600N25N3GAKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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