IPI600N25N3GAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

60m Ω @ 25A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

25A

Power Dissipation :

136W

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Packaging :

Tube

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mount :

Through Hole

Published :

2008

Drain-source On Resistance-Max :

0.06Ohm

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Pbfree Code :

No

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 100V

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Fall Time (Typ) :

8 ns

Factory Lead Time :

18 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

4V @ 90µA

JESD-609 Code :

e3

Number of Terminations :

3

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

136W Tc

Mounting Type :

Through Hole

Turn-Off Delay Time :

22 ns

Terminal Position :

Single

Turn On Delay Time :

10 ns

Max Dual Supply Voltage :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)