IPI600N25N3GAKSA1
- Mfr.Part #
- IPI600N25N3GAKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 25A TO262-3
- Stock
- 7,417
- In Stock :
- 7,417
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Contains Lead
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2008
- FET Type :
- N-Channel
- Turn On Delay Time :
- 10 ns
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 4V @ 90µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSIP-T3
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 136W Tc
- Turn-Off Delay Time :
- 22 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 8 ns
- Halogen Free :
- Halogen Free
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Power Dissipation :
- 136W
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Terminal Finish :
- Tin (Sn)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 25A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2350pF @ 100V
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.06Ohm
- Continuous Drain Current (ID) :
- 25A
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Series :
- OptiMOS™
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Factory Lead Time :
- 18 Weeks
- Max Dual Supply Voltage :
- 250V
- Pin Count :
- 3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Datasheets
- IPI600N25N3GAKSA1

N-Channel Tube 60m Ω @ 25A, 10V ±20V 2350pF @ 100V 29nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI600N25N3GAKSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2350pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 22 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 250V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPI600N25N3GAKSA1 Features
a continuous drain current (ID) of 25A
the turn-off delay time is 22 ns
IPI600N25N3GAKSA1 Applications
There are a lot of Infineon Technologies
IPI600N25N3GAKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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