HP8S36TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Half Bridge)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-F6

DS Breakdown Voltage-Min :

30V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

12A

Number of Terminations :

6

Case Connection :

DRAIN SOURCE

Terminal Form :

Flat

Factory Lead Time :

20 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

5.3 mJ

Current - Continuous Drain (Id) @ 25°C :

27A 80A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

48A

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Cut Tape (CT)

Power - Max :

29W

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 32A, 10V

Drain-source On Resistance-Max :

0.0133Ohm

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Number of Elements :

2

Package / Case :

8-PowerTDFN

Drain to Source Voltage (Vdss) :

30V

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 15V