HP8M31TB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.073Ohm

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Rds On (Max) @ Id, Vgs :

65m Ω @ 8.5A, 10V, 70m Ω @ 8.5A, 10V

RoHS Status :

ROHS3 Compliant

FET Type :

N and P-Channel

Package / Case :

8-PowerTDFN

Avalanche Energy Rating (Eas) :

5.4 mJ

Terminal Form :

Flat

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PDSO-F6

Pulsed Drain Current-Max (IDM) :

18A

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

60V

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

12.3nC, 38nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 1mA

Power - Max :

3W Ta

Transistor Application :

SWITCHING

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

470pF 2300pF @ 30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Number of Terminations :

6