HFA3127RZ96

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation-Max :

150mW

JEDEC-95 Code :

MO-220VEED-2

Power Dissipation :

150mW

Min Operating Temperature :

-55°C

HTS Code :

8541.21.00.75

Number of Terminations :

16

Terminal Finish :

Matte Tin (Sn) - annealed

Collector Emitter Voltage (VCEO) :

8V

DC Current Gain-Min (hFE) :

40

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Max Collector Current :

65mA

Transition Frequency :

8000MHz

Time@Peak Reflow Temperature-Max (s) :

30

Gain Bandwidth Product :

8 GHz

Configuration :

SEPARATE, 5 ELEMENTS

Collector Emitter Breakdown Voltage :

12V

Number of Elements :

5

Pin Count :

16

Frequency :

8GHz

Terminal Position :

QUAD

Continuous Collector Current :

65mA

RoHS Status :

RoHS Compliant

Transistor Application :

AMPLIFIER

Published :

1998

Radiation Hardening :

No

Frequency (Max) :

8GHz

Pbfree Code :

yes

Max Operating Temperature :

125°C

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

Number of Pins :

16

JESD-609 Code :

e3

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

12V

Emitter Base Voltage (VEBO) :

5.5V

Polarity :

NPN

Peak Reflow Temperature (Cel) :

260

Package / Case :

QFN EP

Frequency - Transition :

8GHz