HFA3127B

Manufacturer :

Harris Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

5

Voltage - Collector Emitter Breakdown (Max) :

12V

Current - Collector (Ic) (Max) :

65mA

JESD-609 Code :

e0

JESD-30 Code :

R-PDSO-G16

Noise Figure (dB Typ @ f) :

3.5dB @ 1GHz

Frequency - Transition :

8GHz

JEDEC-95 Code :

MS-012AC

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 2V

Packaging :

Tube

Surface Mount :

yes

Pbfree Code :

No

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

RoHS Status :

Non-RoHS Compliant

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Additional Feature :

LOW NOISE

Terminal Form :

Gull wing

Transition Frequency :

8000MHz

Pin Count :

16

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

5 NPN

Polarity/Channel Type :

NPN

Package / Case :

16-SOIC (0.154, 3.90mm Width)

Power - Max :

150mW

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

16

Configuration :

SEPARATE, 5 ELEMENTS

Qualification Status :

COMMERCIAL

Terminal Finish :

TIN LEAD