GT40QR21(STA1,E,D

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

175°C (TJ)

Element Configuration :

Single

Power - Max :

230 W

Td (on/off) @ 25°C :

-

Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 40A

Reverse Recovery Time (trr) :

600 ns

Max Operating Temperature :

175 °C

Series :

GT40QR21

Mounting Style :

Through Hole

RoHS :

Compliant

Packaging :

Tube

Mounting Type :

Through Hole

Radiation Hardening :

No

Input Type :

Standard

Continuous Collector Current :

40

Minimum Operating Temperature :

- 55 C

Product Status :

Active

Current - Collector (Ic) (Max) :

40 A

Product Category :

IGBT Transistors

Package :

Tube

Product Type :

IGBT Transistors

Collector Emitter Saturation Voltage :

1.5

Base Product Number :

GT40QR21

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

1.2 kV

IGBT Type :

-

Max Collector Current :

40 A

Technology :

Si

Manufacturer :

Toshiba

Maximum Operating Temperature :

+ 175 C

Voltage - Collector Emitter Breakdown (Max) :

1200 V

Switching Energy :

-, 290µJ (off)

Supplier Device Package :

TO-3P(N)

Mount :

Through Hole

Package / Case :

TO-3PN-3

Test Condition :

280V, 40A, 10Ohm, 20V

Current - Collector Pulsed (Icm) :

80 A

Brand :

Toshiba

Subcategory :

IGBTs

Power Dissipation :

230

Min Operating Temperature :

-55 °C