FPNH10

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Gain Bandwidth Product :

650MHz

Voltage - Rated DC :

25V

Power Dissipation :

350mW

Current - Collector (Ic) (Max) :

50mA

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

25V

Packaging :

Bulk

Polarity :

NPN

Mount :

Through Hole

Frequency :

650MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Collector Emitter Voltage (VCEO) :

25V

Frequency - Transition :

650MHz

Power - Max :

350mW

Max Power Dissipation :

350mW

Collector Emitter Breakdown Voltage :

25V

Element Configuration :

Single

Supplier Device Package :

TO-92-3

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Number of Elements :

1

Min Operating Temperature :

-55°C

Max Collector Current :

50mA

Current Rating :

50mA

Transistor Type :

NPN

hFE Min :

60

Mounting Type :

Through Hole

Max Operating Temperature :

150°C

Max Frequency :

650MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

RoHS Status :

RoHS Compliant

Continuous Collector Current :

50mA

Collector Base Voltage (VCBO) :

30V

Emitter Base Voltage (VEBO) :

3V

Lead Free :

Lead Free