FJAFS1720TU
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- Mfr.Part #
- FJAFS1720TU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 12A TO3PF
- Stock
- 6,973
- In Stock ：
- 6,973
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- hFE Min :
- 8
- Number of Pins :
- 3
- Max Power Dissipation :
- 60W
- Collector Emitter Saturation Voltage :
- 250mV
- Factory Lead Time :
- 52 Weeks
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 3.33A, 10A
- Current - Collector Cutoff (Max) :
- 100μA
- RoHS Status :
- RoHS Compliant
- Weight :
- 6.961991g
- Power Dissipation :
- 60W
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Max Collector Current :
- 12A
- Height :
- 26.7mm
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Package / Case :
- TO-3P-3 Full Pack
- Collector Emitter Breakdown Voltage :
- 800V
- Length :
- 15.7mm
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~125°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- Frequency :
- 15MHz
- Collector Emitter Voltage (VCEO) :
- 800V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8.5 @ 11A 5V
- Width :
- 5.7mm
- Collector Base Voltage (VCBO) :
- 1.7kV
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- ESBC™
- Gain Bandwidth Product :
- 15MHz
- Datasheets
- FJAFS1720TU
NPN -55°C~125°C TJ 100μA 1 Elements NPN TO-3P-3 Full Pack Tube Through Hole
FJAFS1720TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 8.5 @ 11A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 3.33A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.During maximum operation, collector current can be as low as 12A volts.
FJAFS1720TU Features
the DC current gain for this device is 8.5 @ 11A 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 3.33A, 10A
the emitter base voltage is kept at 6V
FJAFS1720TU Applications
There are a lot of ON Semiconductor
FJAFS1720TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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