FJAF4310RTU
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- Mfr.Part #
- FJAF4310RTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 140V 10A TO3PF
- Stock
- 8,691
- In Stock ：
- 8,691
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Current - Collector (Ic) (Max) :
- 10A
- Voltage - Collector Emitter Breakdown (Max) :
- 140V
- Transistor Type :
- NPN
- Power - Max :
- 80W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-3PF
- Mounting Type :
- Through Hole
- Package / Case :
- TO-3P-3 Full Pack
- Frequency - Transition :
- 30MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 3A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Packaging :
- Tube
- Datasheets
- FJAF4310RTU
NPN 150°C TJ 10μA ICBO TO-3P-3 Full Pack Tube Through Hole
FJAF4310RTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 3A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 500mA, 5A.The product comes in the supplier device package of TO-3PF.A 140V maximal voltage - Collector Emitter Breakdown is present in the device.
FJAF4310RTU Features
the DC current gain for this device is 50 @ 3A 4V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-3PF
FJAF4310RTU Applications
There are a lot of ON Semiconductor
FJAF4310RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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