FJAF4310YTU
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- Mfr.Part #
- FJAF4310YTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 140V 10A TO3PF-3
- Stock
- 558
- In Stock ：
- 558
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 30MHz
- Package / Case :
- TO-3P-3 Full Pack
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Base Voltage (VCBO) :
- 200V
- Radiation Hardening :
- No
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Type :
- NPN
- hFE Min :
- 50
- Packaging :
- Tube
- Max Power Dissipation :
- 80W
- Collector Emitter Voltage (VCEO) :
- 140V
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 80W
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 90 @ 3A 4V
- Max Collector Current :
- 10A
- Lead Free :
- Lead Free
- Weight :
- 6.962g
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Frequency :
- 30MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Number of Pins :
- 3
- Voltage - Rated DC :
- 140V
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Transition Frequency :
- 30MHz
- Current Rating :
- 10A
- Transistor Application :
- AMPLIFIER
- Published :
- 2009
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 140V
- Operating Temperature :
- 150°C TJ
- Datasheets
- FJAF4310YTU
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Tube Through Hole
FJAF4310YTU Overview
In this device, the DC current gain is 90 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).30MHz is present in the transition frequency.Maximum collector currents can be below 10A volts.
FJAF4310YTU Features
the DC current gain for this device is 90 @ 3A 4V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 30MHz
FJAF4310YTU Applications
There are a lot of ON Semiconductor
FJAF4310YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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