FJAF4210RTU

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Mfr.Part #
FJAF4210RTU
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
TRANS PNP 140V 10A TO3PF
Stock
4,521
In Stock :
4,521

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Current Rating :
-10A
Transistor Type :
PNP
Operating Temperature :
150°C TJ
Pbfree Code :
yes
Frequency :
30MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Collector Emitter Saturation Voltage :
-500mV
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
500mV @ 500mA, 5A
Transition Frequency :
30MHz
Collector Emitter Voltage (VCEO) :
140V
Max Collector Current :
10A
Transistor Application :
AMPLIFIER
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Current - Collector Cutoff (Max) :
10μA ICBO
Factory Lead Time :
6 Weeks
Number of Elements :
1
Element Configuration :
Single
RoHS Status :
RoHS Compliant
Package / Case :
TO-3P-3 Full Pack
Published :
2017
Number of Pins :
3
Mounting Type :
Through Hole
Radiation Hardening :
No
ECCN Code :
EAR99
Weight :
6.962g
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
140V
Max Power Dissipation :
80W
Packaging :
Tube
Number of Terminations :
3
Polarity/Channel Type :
PNP
Voltage - Rated DC :
-140V
hFE Min :
50
Emitter Base Voltage (VEBO) :
-6V
Transistor Element Material :
SILICON
Power Dissipation :
80W
Collector Base Voltage (VCBO) :
-200V
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 3A 4V
Gain Bandwidth Product :
30MHz
Datasheets
FJAF4210RTU
Introducing Transistors - Bipolar (BJT) - Single onsemi FJAF4210RTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-3P-3 Full Pack, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, FJAF4210RTU pinout, FJAF4210RTU datasheet PDF, FJAF4210RTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJAF4210RTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJAF4210RTU


PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3 Full Pack Tube Through Hole

FJAF4210RTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 10A volts.

FJAF4210RTU Features


the DC current gain for this device is 50 @ 3A 4V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 30MHz


FJAF4210RTU Applications


There are a lot of ON Semiconductor
FJAF4210RTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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