FJAF4210RTU
- Mfr.Part #
- FJAF4210RTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 140V 10A TO3PF
- Stock
- 4,521
- In Stock :
- 4,521
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Current Rating :
- -10A
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Frequency :
- 30MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- -500mV
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Transition Frequency :
- 30MHz
- Collector Emitter Voltage (VCEO) :
- 140V
- Max Collector Current :
- 10A
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Factory Lead Time :
- 6 Weeks
- Number of Elements :
- 1
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-3P-3 Full Pack
- Published :
- 2017
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Weight :
- 6.962g
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 140V
- Max Power Dissipation :
- 80W
- Packaging :
- Tube
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -140V
- hFE Min :
- 50
- Emitter Base Voltage (VEBO) :
- -6V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 80W
- Collector Base Voltage (VCBO) :
- -200V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 3A 4V
- Gain Bandwidth Product :
- 30MHz
- Datasheets
- FJAF4210RTU
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3 Full Pack Tube Through Hole
FJAF4210RTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 10A volts.
FJAF4210RTU Features
the DC current gain for this device is 50 @ 3A 4V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 30MHz
FJAF4210RTU Applications
There are a lot of ON Semiconductor
FJAF4210RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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