FJAF4210YTU
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- Mfr.Part #
- FJAF4210YTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 140V 10A TO3PF
- Stock
- 4,211
- In Stock ：
- 4,211
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -140V
- Collector Emitter Saturation Voltage :
- -500mV
- JESD-609 Code :
- e3
- Package / Case :
- TO-3P-3 Full Pack
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 6 Weeks
- Transistor Type :
- PNP
- hFE Min :
- 50
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Transition Frequency :
- 30MHz
- Weight :
- 6.962g
- Emitter Base Voltage (VEBO) :
- -6V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 10A
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 80W
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Gain Bandwidth Product :
- 30MHz
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 90 @ 3A 4V
- Published :
- 2011
- Collector Emitter Voltage (VCEO) :
- 140V
- Frequency :
- 30MHz
- Current Rating :
- -10A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- -200V
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 140V
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 80W
- Datasheets
- FJAF4210YTU
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3 Full Pack Tube Through Hole
FJAF4210YTU Overview
This device has a DC current gain of 90 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 500mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 30MHz.A maximum collector current of 10A volts is possible.
FJAF4210YTU Features
the DC current gain for this device is 90 @ 3A 4V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 30MHz
FJAF4210YTU Applications
There are a lot of ON Semiconductor
FJAF4210YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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