FJAF6810DYDTBTU
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- Mfr.Part #
- FJAF6810DYDTBTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 750V 10A TO3PF
- Stock
- 34,125
- In Stock ：
- 34,125
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 6A 5V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Voltage - Collector Emitter Breakdown (Max) :
- 750V
- Base Part Number :
- FJAF6810
- Transistor Type :
- NPN
- Package / Case :
- TO-3P-3 Full Pack
- Current - Collector Cutoff (Max) :
- 1mA
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 10A
- Power - Max :
- 60W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1.5A, 6A
- Datasheets
- FJAF6810DYDTBTU
NPN 150°C TJ 1mA TO-3P-3 Full Pack Tube Through Hole
FJAF6810DYDTBTU Overview
In this device, the DC current gain is 5 @ 6A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 1.5A, 6A.The device exhibits a collector-emitter breakdown at 750V.
FJAF6810DYDTBTU Features
the DC current gain for this device is 5 @ 6A 5V
the vce saturation(Max) is 3V @ 1.5A, 6A
FJAF6810DYDTBTU Applications
There are a lot of ON Semiconductor
FJAF6810DYDTBTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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