FGH40N60SMD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Reverse Recovery Time :

36 ns

Collector Emitter Voltage (VCEO) :

600V

Lead Free :

Lead Free

Input Type :

Standard

Max Collector Current :

80A

Power - Max :

349W

Element Configuration :

Single

Height :

20.6mm

Transistor Application :

POWER CONTROL

Base Part Number :

FGH40N60

Max Power Dissipation :

349W

Weight :

6.39g

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

IGBT Type :

Field Stop

Fall Time-Max (tf) :

17ns

Collector Emitter Breakdown Voltage :

600V

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Td (on/off) @ 25°C :

12ns/92ns

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-247-3

Additional Feature :

LOW CONDUCTION LOSS

Width :

4.7mm

Factory Lead Time :

5 Weeks

Current - Collector Pulsed (Icm) :

120A

Length :

15.6mm

JESD-609 Code :

e3

Packaging :

Tube

Gate-Emitter Thr Voltage-Max :

6V

Gate Charge :

119nC

Turn Off Time-Nom (toff) :

132 ns

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 40A

Published :

2013

Radiation Hardening :

No

Turn On Time :

37 ns

Pbfree Code :

yes

HTS Code :

8541.29.00.95

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Collector Emitter Saturation Voltage :

2.1V

Test Condition :

400V, 40A, 6 Ω, 15V

Gate-Emitter Voltage-Max :

20V

Mount :

Through Hole

Rise Time-Max :

28ns

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Switching Energy :

870μJ (on), 260μJ (off)

JEDEC-95 Code :

TO-247AB

REACH SVHC :

No SVHC