FGH40N60SFTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Number of Pins :

3

Max Power Dissipation :

290W

Polarity/Channel Type :

N-Channel

Test Condition :

400V, 40A, 10 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Switching Energy :

1.13mJ (on), 310μJ (off)

Number of Terminations :

3

Power - Max :

290W

Element Configuration :

Single

Input Type :

Standard

Operating Temperature :

-55°C~150°C TJ

Gate-Emitter Voltage-Max :

20V

Radiation Hardening :

No

Transistor Application :

POWER CONTROL

IGBT Type :

Field Stop

Pbfree Code :

yes

Mounting Type :

Through Hole

Mount :

Through Hole

Fall Time-Max (tf) :

54ns

Weight :

6.39g

Turn Off Time-Nom (toff) :

150 ns

Package / Case :

TO-247-3

Max Breakdown Voltage :

1.2kV

Collector Emitter Breakdown Voltage :

600V

HTS Code :

8541.29.00.95

JEDEC-95 Code :

TO-247AB

Published :

2011

Collector Emitter Saturation Voltage :

2.3V

Base Part Number :

FGH40N60

Additional Feature :

LOW CONDUCTION LOSS

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Length :

15.6mm

Max Collector Current :

80A

Width :

4.7mm

Number of Elements :

1

Height :

20.6mm

Gate Charge :

120nC

JESD-609 Code :

e3

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 40A

Turn On Time :

67 ns

Current - Collector Pulsed (Icm) :

120A

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

600V

Packaging :

Tube

Td (on/off) @ 25°C :

25ns/115ns

ECCN Code :

EAR99

Gate-Emitter Thr Voltage-Max :

6.5V

Case Connection :

COLLECTOR

Factory Lead Time :

9 Weeks