FGA50N100BNTDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

2.5V

Collector Emitter Voltage (VCEO) :

1kV

Max Power Dissipation :

156W

Collector Emitter Breakdown Voltage :

1kV

Factory Lead Time :

5 Weeks

Weight :

6.401g

Transistor Application :

AUTOMOTIVE IGNITION

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Length :

15.8mm

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Packaging :

Tube

Mounting Type :

Through Hole

Max Collector Current :

50A

Number of Pins :

3

HTS Code :

8541.29.00.95

Voltage - Collector Emitter Breakdown (Max) :

1000V

Published :

2013

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Number of Elements :

1

Power Dissipation :

156W

Current - Collector Pulsed (Icm) :

100A

Package / Case :

TO-3P-3, SC-65-3

Pbfree Code :

yes

Turn Off Time-Nom (toff) :

760 ns

Height :

20.1mm

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate Charge :

275nC

Gate-Emitter Voltage-Max :

25V

Input Type :

Standard

Width :

5mm

IGBT Type :

NPT and Trench

Element Configuration :

Single

Fall Time-Max (tf) :

250ns

Polarity/Channel Type :

N-Channel

Turn On Time :

460 ns

JESD-609 Code :

e3

Gate-Emitter Thr Voltage-Max :

7V

Reverse Recovery Time :

1.5μs