FGA50N100BNTDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Through Hole

Power Dissipation :

156W

Pbfree Code :

yes

Height :

20.1mm

Max Collector Current :

50A

Transistor Element Material :

SILICON

Packaging :

Tube

Input Type :

Standard

Published :

2013

Gate-Emitter Thr Voltage-Max :

7V

Voltage - Collector Emitter Breakdown (Max) :

1000V

JESD-609 Code :

e3

Radiation Hardening :

No

Transistor Application :

AUTOMOTIVE IGNITION

IGBT Type :

NPT and Trench

Collector Emitter Breakdown Voltage :

1kV

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Gate Charge :

275nC

Width :

5mm

Package / Case :

TO-3P-3, SC-65-3

Gate-Emitter Voltage-Max :

25V

HTS Code :

8541.29.00.95

Mount :

Through Hole

ECCN Code :

EAR99

Number of Elements :

1

Reverse Recovery Time :

1.5μs

Turn Off Time-Nom (toff) :

760 ns

Factory Lead Time :

5 Weeks

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

156W

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Turn On Time :

460 ns

Collector Emitter Saturation Voltage :

2.5V

Current - Collector Pulsed (Icm) :

100A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Emitter Voltage (VCEO) :

1kV

Number of Pins :

3

Element Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time-Max (tf) :

250ns

Length :

15.8mm

Weight :

6.401g