FGA50N100BNTD2

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

1kV

Pbfree Code :

yes

IGBT Type :

NPT and Trench

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate-Emitter Voltage-Max :

25V

JESD-609 Code :

e3

Published :

2013

Current - Collector Pulsed (Icm) :

200A

Turn On Time :

102 ns

Collector Emitter Breakdown Voltage :

1kV

Voltage - Collector Emitter Breakdown (Max) :

1000V

Length :

15.8mm

Gate-Emitter Thr Voltage-Max :

7V

Width :

5mm

Fall Time-Max (tf) :

100ns

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Reverse Recovery Time :

75 ns

Height :

20.1mm

Operating Temperature :

-55°C~150°C TJ

HTS Code :

8541.29.00.95

Factory Lead Time :

8 Weeks

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A

Max Collector Current :

50A

Td (on/off) @ 25°C :

34ns/243ns

Mounting Type :

Through Hole

Number of Terminations :

3

Mount :

Through Hole

Test Condition :

600V, 60A, 10 Ω, 15V

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Transistor Application :

POWER CONTROL

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.5V

Gate Charge :

257nC

Number of Elements :

1

Element Configuration :

Single

Power - Max :

156W

Package / Case :

TO-3P-3, SC-65-3

RoHS Status :

ROHS3 Compliant

Input Type :

Standard

Turn Off Time-Nom (toff) :

308 ns

Weight :

6.401g

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

156W