FDS8962C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

Power - Max :

900mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Number of Terminations :

8

DS Breakdown Voltage-Min :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

575pF @ 15V

FET Type :

N and P-Channel

Drain Current-Max (Abs) (ID) :

7A

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Pin Count :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 10V

Series :

PowerTrench®

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.03Ohm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Form :

Gull wing

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

7A 5A

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Pulsed Drain Current-Max (IDM) :

20A

Packaging :

Tape and Reel (TR)