FDS8947A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Power - Max :

900mW

Drain-source On Resistance-Max :

0.052Ohm

Rds On (Max) @ Id, Vgs :

52m Ω @ 4A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

4A

FET Type :

2 P-Channel (Dual)

JESD-30 Code :

R-PDSO-G8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

20A

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

4A

Surface Mount :

yes

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 15V

Number of Elements :

2

Vgs(th) (Max) @ Id :

3V @ 250µA