FDS6990A

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Element Configuration :

Dual

FET Type :

2 N-Channel (Dual)

Drain to Source Breakdown Voltage :

30V

Resistance :

18mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

2

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

3V @ 250µA

REACH SVHC :

No SVHC

Contact Plating :

Tin

Mount :

Surface Mount

Mounting Type :

Surface Mount

Height :

1.57mm

Rise Time :

5ns

Number of Terminations :

8

Dual Supply Voltage :

30V

Current Rating :

7.5A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

1.6W

Pbfree Code :

yes

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1235pF @ 15V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn-Off Delay Time :

28 ns

Factory Lead Time :

10 Weeks

Number of Pins :

8

Fall Time (Typ) :

5 ns

Weight :

187mg

Voltage - Rated DC :

30V

Transistor Application :

SWITCHING

Length :

4.9mm

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Width :

3.9mm

Threshold Voltage :

1.9V

Published :

2003

Radiation Hardening :

No

Continuous Drain Current (ID) :

7.5A

Transistor Element Material :

SILICON

Nominal Vgs :

1.9 V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Packaging :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

10 ns

Rds On (Max) @ Id, Vgs :

18m Ω @ 7.5A, 10V

Series :

PowerTrench®

JESD-609 Code :

e3

Max Power Dissipation :

900mW

RoHS Status :

ROHS3 Compliant