FDS6162N7

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

NICKEL PALLADIUM GOLD

Vgs (Max) :

±12V

Drain-source On Resistance-Max :

0.0035Ohm

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

20V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Surface Mount :

yes

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Pbfree Code :

yes

Number of Terminations :

8

Terminal Position :

Dual

Power Dissipation-Max :

3W Ta

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

23A

JESD-609 Code :

e4

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 23A, 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

8

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 4.5V

JESD-30 Code :

R-PDSO-G8

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

60A

Current - Continuous Drain (Id) @ 25°C :

23A Ta

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

5.521pF @ 10V

Operating Mode :

ENHANCEMENT MODE