FDS6064N7
- Mfr.Part #
- FDS6064N7
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 23A 8SO
- Stock
- 6,957
- In Stock :
- 6,957
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 4.5V
- Pin Count :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain Current-Max (Abs) (ID) :
- 23A
- JESD-609 Code :
- e4
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 20V
- Drain-source On Resistance-Max :
- 0.0035Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 60A
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Qualification Status :
- COMMERCIAL
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Series :
- PowerTrench®
- Vgs (Max) :
- ±8V
- Number of Terminations :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 23A, 4.5V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 3W Ta
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PDSO-G8
- Input Capacitance (Ciss) (Max) @ Vds :
- 7.191pF @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 20V
- Datasheets
- FDS6064N7

N-Channel Tape & Reel (TR) 3.5m Ω @ 23A, 4.5V ±8V 7.191pF @ 10V 98nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
FDS6064N7 Overview
The maximum input capacitance of this device is 7.191pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 23A.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 20V.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.
FDS6064N7 Features
based on its rated peak drain current 60A.
a 20V drain to source voltage (Vdss)
FDS6064N7 Applications
There are a lot of Rochester Electronics, LLC
FDS6064N7 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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