FDS6982S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Number of Terminations :

8

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

20A

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

2

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2040pF @ 10V

Terminal Finish :

MATTE TIN

Qualification Status :

COMMERCIAL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.028Ohm

Transistor Application :

SWITCHING

Power - Max :

900mW

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

28m Ω @ 6.3A, 10V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Series :

PowerTrench®, SyncFET™

Pin Count :

8

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

6.3A

Current - Continuous Drain (Id) @ 25°C :

6.3A 8.6A

Peak Reflow Temperature (Cel) :

260

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)