FDS6982AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 10V

Number of Elements :

2

Turn-Off Delay Time :

24 ns

REACH SVHC :

No SVHC

Max Power Dissipation :

2W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Form :

Gull wing

Weight :

187mg

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

3.99mm

Rise Time :

7ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

3 ns

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

12 ns

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Mount :

Surface Mount

Radiation Hardening :

No

Contact Plating :

Tin

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Nominal Vgs :

1.4 V

Transistor Application :

SWITCHING

Recovery Time :

19 ns

Number of Channels :

2

Number of Pins :

8

Length :

5mm

FET Type :

2 N-Channel (Dual)

Height :

1.75mm

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®, SyncFET™

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

28m Ω @ 6.3A, 10V

Max Junction Temperature (Tj) :

150°C

Turn On Time-Max (ton) :

34ns

Published :

2005

Continuous Drain Current (ID) :

8.6A

Pulsed Drain Current-Max (IDM) :

30A

Mounting Type :

Surface Mount

Resistance :

28mOhm

Current - Continuous Drain (Id) @ 25°C :

6.3A 8.6A

Threshold Voltage :

1.9V

Lead Free :

Lead Free

Turn Off Time-Max (toff) :

64ns

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2W

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

30V

Power - Max :

900mW

Factory Lead Time :

18 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Current Rating :

8.6A