FDS6982
- Mfr.Part #
- FDS6982
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
- Stock
- 12,056
- In Stock :
- 12,056
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 6.3A 8.6A
- Continuous Drain Current (ID) :
- 8.6A
- Power - Max :
- 900mW
- Drain to Source Breakdown Voltage :
- 30V
- Turn On Delay Time :
- 12 ns
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pbfree Code :
- yes
- Resistance :
- 28mOhm
- Max Power Dissipation :
- 2W
- Number of Channels :
- 2
- Weight :
- 187mg
- Rise Time :
- 7ns
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 6.3A, 10V
- Length :
- 5mm
- Operating Temperature :
- -55°C~150°C TJ
- Turn Off Time-Max (toff) :
- 64ns
- Number of Elements :
- 2
- Number of Terminations :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Turn On Time-Max (ton) :
- 34ns
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 18 Weeks
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Width :
- 3.99mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 8.6A
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Height :
- 1.75mm
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- 1.4 V
- FET Type :
- 2 N-Channel (Dual)
- Series :
- PowerTrench®, SyncFET™
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2W
- JESD-609 Code :
- e3
- Threshold Voltage :
- 1.9V
- Voltage - Rated DC :
- 30V
- Turn-Off Delay Time :
- 24 ns
- Fall Time (Typ) :
- 3 ns
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 610pF @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- FET Feature :
- Logic Level Gate
- Pulsed Drain Current-Max (IDM) :
- 30A
- REACH SVHC :
- No SVHC
- Published :
- 2005
- Recovery Time :
- 19 ns
- Datasheets
- FDS6982

FDS6982AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6982AS Description
The FDS6982AS is designed to replace two single SO-8 MOSFET and Schottky diodes in synchronous DC:DC power supplies to provide a variety of external voltages for laptops and other battery-powered electronic devices. The FDS6982AS contains two unique 30V, N-channel, logic levels PowerTritch MOSFET designed to maximize power conversion efficiency. The design of the high-end switch (Q1) focuses on reducing the switching loss, while the low-end switch (Q2) is optimized to reduce the turn-on loss. Q2 also includes an integrated Schottky diode using on Semiconductor monolithic SyncFET technology.
FDS6982AS Features
Q2
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.6A, 30V
Max. RDS(on) = 13.5 m|? at VGS = 10 V
Max. RDS(on) = 16.5 m|? at VGS = 4.5 V
Low gate charge (21nC typical)
Q1
Optimized for low switching losses
6.3A, 30V
Max. RDS(on) = 28.0 m|? at VGS = 10 V
Max. RDS(on) = 35.0 m|? at VGS = 4.5 V
Low gate charge (11nC typical)
FDS6982AS Applications
This product is general usage and suitable for many different applications.
Notebook
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