FDS6975
- Mfr.Part #
- FDS6975
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2P-CH 30V 6A 8SOIC
- Stock
- 5,106
- In Stock :
- 5,106
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Turn On Delay Time :
- 13 ns
- Transistor Application :
- SWITCHING
- Resistance :
- 32mOhm
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 10 Weeks
- Rise Time :
- 22ns
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 6A
- Voltage - Rated DC :
- -30V
- Fall Time (Typ) :
- 18 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain Current-Max (Abs) (ID) :
- 6A
- Continuous Drain Current (ID) :
- -6A
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- JESD-609 Code :
- e3
- Length :
- 5mm
- Turn-Off Delay Time :
- 47 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Published :
- 2017
- Drain to Source Breakdown Voltage :
- -30V
- Number of Elements :
- 2
- Current Rating :
- -6A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Height :
- 1.5mm
- FET Feature :
- Logic Level Gate
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Max Power Dissipation :
- 2W
- Contact Plating :
- Tin
- Width :
- 4mm
- Element Configuration :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 187mg
- Power - Max :
- 900mW
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2W
- Series :
- PowerTrench®
- Number of Terminations :
- 8
- Pbfree Code :
- yes
- Threshold Voltage :
- -1.7V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1540pF @ 15V
- Dual Supply Voltage :
- -30V
- REACH SVHC :
- No SVHC
- Drain to Source Voltage (Vdss) :
- 30V
- Termination :
- SMD/SMT
- FET Type :
- 2 P-Channel (Dual)
- Nominal Vgs :
- -1.7 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 6A, 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Datasheets
- FDS6975

FDS6975 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6975 Description
These P-channel logic level MOSFET are manufactured using an advanced PowerTrtch process that is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for laptop applications: load switching and power management, battery charging circuits and DC/DC conversion.
FDS6975 Features
-6 A, -30 V
RDS(ON) = 0.032 Ω @ VGS = -10 V
RDS(ON) = 0.045 Ω @ VGS = -4.5 V.
Low gate charge (14.5nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
FDS6975 Applications
This product is general usage and suitable for many different applications.
Load Switch
Power Management
Battery Charging Circuit
DC/DC Converters
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