FDS6930A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Weight :

187mg

Terminal Form :

Gull wing

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

4.6A

Fall Time (Typ) :

13 ns

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Rise Time :

8ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

40m Ω @ 5.5A, 10V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 15V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Power Dissipation :

2W

Series :

PowerTrench®

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Current Rating :

5.5A

Max Power Dissipation :

900mW

ECCN Code :

EAR99

Element Configuration :

Dual

Turn-Off Delay Time :

17 ns

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

5.5A

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 5V

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

Number of Elements :

2

Voltage - Rated DC :

30V

Resistance :

40mOhm

Threshold Voltage :

1.5V

Number of Pins :

8

Number of Terminations :

8

Turn On Delay Time :

5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)